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SFTN1450R
N-Channel Enhancement Mode MOSFET
Drain Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed Drain Current 1)
TC = 25℃ TC = 100℃
Power Dissipation
TC = 25℃
Maximum Thermal Resistance from Juntion to Case
Operating Junction and Storage Temperature Range
1) Pulse width limited by safe operating area.
Symbol VDS VGS ID ID IDM PD RθJC
TJ, Tstg
Value 500 ± 25 12
8 48 90 1.
SFTN1450R Datasheet
