WTBV56DM - POWER TRANSISTOR

Features

High Voltage.
Very High Switch Speed.
BVCEO : 400V.
BVCBO : 800V.
IC : 4A.
Silicon Triple Diffused Type.

Winsem Technology

Datasheet Details

Part number	WTBV56DM
Manufacturer	Winsem Technology
File Size	383.93 KB
Description	POWER TRANSISTOR
Datasheet	WTBV56DM Datasheet
Additional preview pages of the WTBV56DM datasheet.

📁 Similar Datasheet

WTB27-3P2421 - PHOTOELECTRIC SENSORS (SICK)
WTB27-3P2441 - PHOTOELECTRIC SENSORS (SICK)
WTB2S-2E1310 - Photoelectric sensors (SICK)
WTB2S-2N3210 - Photoelectric sensors (SICK)
WTB2S-2P1330 - Photoelectric sensors (SICK)
WTB2S-2P3030S16 - Photoelectric sensors (SICK)
WTB2S-2P3110 - Photoelectric sensors (SICK)
WTB2S-2P3130S07 - Photoelectric sensors (SICK)
WTB2S-2P3160 - Photoelectric sensors (SICK)
WTB2S-2P3210 - Photoelectric sensors (SICK)

Other Datasheets by Winsem Technology

WTBV56DMR - POWER TRANSISTOR
WTBV53DM - POWER TRANSISTOR
WTBV53DMR - POWER TRANSISTOR
WTBV116DI - POWER TRANSISTOR
WTBV116DL - POWER TRANSISTOR
WTBV118DI - POWER TRANSISTOR
WTBV118DL - POWER TRANSISTOR
WTBV45 - POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text

Winsem Technology Corp. High Voltage NPN Transistor WTBV56DM (R) / WTI56D POWER TRANSISTOR TO-126 Pin Definition 1. Emitter 2. Collector 3. Base TO-126 R Pin Definition 1. Base 2. Collector 3.

Published: Nov 17, 2014 |