WTBV68 - POWER TRANSISTOR

Features

High Voltage.
Very High Switch Speed.
BVCEO : 400V.
BVCBO : 700V.
IC : 0.6A.
VCE(SAT) : 1.5V@Ic / IB=200mA/ 20mA.
Silicon Triple Diffused Type.

Winsem Technology

Datasheet Details

Part number	WTBV68
Manufacturer	Winsem Technology
File Size	209.86 KB
Description	POWER TRANSISTOR
Datasheet	WTBV68 Datasheet
Additional preview pages of the WTBV68 datasheet.

📁 Similar Datasheet

WTB27-3P2421 - PHOTOELECTRIC SENSORS (SICK)
WTB27-3P2441 - PHOTOELECTRIC SENSORS (SICK)
WTB2S-2E1310 - Photoelectric sensors (SICK)
WTB2S-2N3210 - Photoelectric sensors (SICK)
WTB2S-2P1330 - Photoelectric sensors (SICK)
WTB2S-2P3030S16 - Photoelectric sensors (SICK)
WTB2S-2P3110 - Photoelectric sensors (SICK)
WTB2S-2P3130S07 - Photoelectric sensors (SICK)
WTB2S-2P3160 - Photoelectric sensors (SICK)
WTB2S-2P3210 - Photoelectric sensors (SICK)

Other Datasheets by Winsem Technology

WTBV116DI - POWER TRANSISTOR
WTBV116DL - POWER TRANSISTOR
WTBV118DI - POWER TRANSISTOR
WTBV118DL - POWER TRANSISTOR
WTBV45 - POWER TRANSISTOR
WTBV45M - POWER TRANSISTOR
WTBV46 - POWER TRANSISTOR
WTBV46M - POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text

Winsem Technology Corp. High Voltage NPN Power Transistor Features • High Voltage • Very High Switch Speed • BVCEO : 400V • BVCBO : 700V • IC : 0.6A • VCE(SAT) : 1.5V@Ic / IB=200mA/ 20mA • Silicon Triple Diffused Type Application • Electronic Ballasts • Adapter • Lighting WTBV68 POWER TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PD TJ TSTG Version A11 Max Rating 700 400 9 0.6 1.2 1.0 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp.

Published: Nov 17, 2014 |