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Winsem Technology

WTI56D Datasheet Preview

WTI56D Datasheet

POWER TRANSISTOR

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Winsem Technology Corp.
High Voltage NPN Transistor
WTBV56DM (R) / WTI56D
POWER TRANSISTOR
TO-126
Pin Definition
1. Emitter
2. Collector
3. Base
TO-126 R
Pin Definition
1. Base
2. Collector
3. Emitter
Features
• High Voltage
• Very High Switch Speed
• BVCEO : 400V
• BVCBO : 800V
• IC : 4A
• Silicon Triple Diffused Type
Application
• Electronic Ballasts
• Adapter
• Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Total Power Dissipation(TO126)
Total Power Dissipation(TO251)
Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
TJ
TSTG
Version A12
Max Rating
800
400
9
4
8
20
35
150
-55 ~ +150
Unit
V
V
V
A
A
W
Page 1




Winsem Technology

WTI56D Datasheet Preview

WTI56D Datasheet

POWER TRANSISTOR

No Preview Available !

Winsem Technology Corp.
WTBV56DM (R) / WTI56D
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cutoff Current
BVCBO
BVCEO
BVEBO
ICBO
IC = 1mA, IB=0
IC = 10mA, IE=0
IE = 1mA, IC=0
VCB = 700V, IE=0
Emitter Cutoff Current
IEBO
hFE1
VEB = 7V, IC=0
VCE = 5V, IC=500mA
DC Current Gain
hFE2 VCE = 5V, IC=1A
hFE3 VCE = 5V, IC=2A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT1) IC/IB = 0.5A / 0.1A
VCE(SAT2) IC/IB = 1A / 0.25A
VBE(SAT1) IC/IB = 0.5A / 0.1A
VBE(SAT2) IC/IB = 1A / 0.25A
Min Typ Max Unit
800 ─
400 ─
9─
──
─V
─V
─V
110 ㎂
─ ─ 225 ㎂
30 ─
20 ─
40
15 ─
─ ─ 0.7
V
──
1
─ ─ 1.3
V
─ ─ 1.5
Resistive Load Switching Time (Ratings)
Rise Time
Ton
Storage Time
tSTG
Fall Time
tf
Vcc=250V, IC=1A,
IB1 = IB2 = 0.2A,
tp = 25uS
Duty Cycle ≦ 1%
─ ─ 0.7 uS
─ 3.5 5 uS
0.2 0.6
uS
Version A12
Page 2


Part Number WTI56D
Description POWER TRANSISTOR
Maker Winsem Technology
Total Page 5 Pages
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