WFF15N60 Datasheet | Winsemi

WFF15N60 Product Description Silicon N-Channel MOSFET Features - 15A,600V, RDS(on)(Max0.52Ω)@VGS=10V - Ultra-low Gate charge(Typical 36nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp...