Datasheet4U Logo Datasheet4U.com

WFF15N60 - Power MOSFET

Description

Silicon N-Channel MOSFET

Features

  • 15A,600V, RDS(on)(Max0.52Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 36nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet Details

Part number WFF15N60
Manufacturer Winsemi
File Size 220.23 KB
Description Power MOSFET
Datasheet download datasheet WFF15N60 Datasheet

📁 Similar Datasheet

  • WFF10N60 - N-Channel MOSFET (Wisdom technologies)
  • WFF10N60 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFF10N65 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFF1101 - (WFF1xx1) GB Directions for Use (BOSCH)
  • WFF1121 - (WFF1xx1) GB Directions for Use (BOSCH)
  • WFF1201 - (WFF1xx1) GB Directions for Use (BOSCH)
  • WFF12N60 - N-Channel MOSFET (Wisdom technologies)
  • WFF12N60 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFF12N65 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • WFF1301 - (WFF1xx1) GB Directions for Use (BOSCH)
Other Datasheets by Winsemi

Full PDF Text Transcription

Click to expand full text
WFF15N60 Product Description Silicon N-Channel MOSFET Features � 15A,600V, RDS(on)(Max0.52Ω)@VGS=10V � Ultra-low Gate charge(Typical 36nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Published: |