WFF4N60 Key Features
- RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested
- 1. Gate {
| Manufacturer | Part Number | Description |
|---|---|---|
Winsemi |
WFF4N60 | Silicon N-Channel MOSFET |
Winsemi |
WFF4N60C | Silicon N-Channel MOSFET |