WFF4N65 Key Features
- RDS(on) (Max 2.7 Ω )@VGS=10V
- Gate Charge (Typical 15nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (150°C)
- Part: WFF4N65
- Manufacturer: Wisdom technologies
- Size: 735.94 KB
Other WFF4N65 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Winsemi |
WFF4N65L | Silicon N-Channel MOSFET |
|
Winsemi |
WFF4N65S | 650V Super-Junction Power MOSFET |
WFF4N65 Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.