WFP75N75 Key Features
- RDS(on) (Max 0.017 Ω )@VGS=10V
- Gate Charge (Typical 85nC)
- Improved dv/dt Capability, High Ruggedness
- 100% Avalanche Tested
- Maximum Junction Temperature Range (175°C)
- Part: WFP75N75
- Manufacturer: Wisdom technologies
- Size: 761.21 KB
Related Wisdom technologies Datasheets
| Part Number | Description |
|---|---|
| WFP75N08 | N-Channel MOSFET |
| WFP70N06 | N-Channel MOSFET |
| WFP730 | N-Channel MOSFET |
| WFP7N60 | N-Channel MOSFET |
| WFP10N60 | N-Channel MOSFET |
WFP75N75 Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.