C2M0045170P Description
C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode.
C2M0045170P Key Features
- 2nd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Resistant to latch-up
- Halogen free, RoHS pliant