C2M0045170P Datasheet and Specifications PDF

The C2M0045170P is a Silicon Carbide Power MOSFET.

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Part NumberC2M0045170P Datasheet
ManufacturerCree
Overview VDS 1700 V C2M0045170P Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode Features Package • Optimized package w. Package
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High Blocking Voltage with Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Halogen Free, RoHS Compliant TAB Drain Benefi.
Part NumberC2M0045170P Datasheet
DescriptionSilicon Carbide Power MOSFET
ManufacturerWolfspeed
Overview C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of.
* 2nd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Resistant to latch-up
* Halogen free, RoHS compliant TO-247-4L.