Datasheet4U Logo Datasheet4U.com

C3M0016120K - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • 3rd generation SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Ordering Part Number Package C3M0016120K TO 247-4 Marking C3M0016120K.

📥 Download Datasheet

Datasheet preview – C3M0016120K

Datasheet Details

Part number C3M0016120K
Manufacturer Wolfspeed
File Size 847.62 KB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0016120K Datasheet
Additional preview pages of the C3M0016120K datasheet.

📁 Similar Datasheet

Other Datasheets by Wolfspeed

Full PDF Text Transcription

Click to expand full text
C3M0016120K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Ordering Part Number Package C3M0016120K TO 247-4 Marking C3M0016120K Applications • Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode power supplies • Load switch Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switch
Published: |