C3M0016120K Description
C3M0016120K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode.
C3M0016120K Key Features
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances