C3M0016120K Datasheet | Specifications & PDF Download

C3M0016120K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology • Optim

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VDS 1200 V C3M0016120K ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode

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C3M0016120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO

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