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C3M0060065J Datasheet Silicon Carbide Power MOSFET

Manufacturer: Wolfspeed

Overview: C3M0060065J Silicon Carbide Power MOSFET C3MTM MOSFET Technology TAB N-Channel Enhancement Mode Drain Drain.

Key Features

  • 3rd Generation SiC MOSFET technology.
  • Low inductance package with driver source pin.
  • 7mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant 1234567 G KS S S S S S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Wolfspeed, Inc. is in the process of.

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