C3M0160120J
C3M0160120J is Silicon Carbide Power MOSFET manufactured by Wolfspeed.
Features
- 3rd generation Solicon Carbide (Si C) MOSFET technology
- Low impedance package with driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, Ro HS pliant
1 2 34 5 6 7 G KS S S S S S
Gate (Pin 1)
Driver Source (Pin 2)
Drain (TAB)
Power Source (Pin 3,4,5,6,7)
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
Part Number C3M0160120J
Package TO 263-7
Marking C3M0160120J
Applications
- Renewable energy
- High voltage DC/DC converters
- Switch Mode Power Supplies
- UPS
Key Parameters
Benefits
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency
Parameter Drain
- Source Voltage Maximum Gate
- Source Voltage Operational Gate-Source Voltage
DC Continuous Drain Current
Symbol VDS
VGS(max) VGS op
Min. -8
Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Solder Temperature
IDM PD TJ, Tstg TL
Typ....
