C3M0160120J
C3M0160120J is Silicon Carbide Power MOSFET manufactured by Wolfspeed.
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
TAB Drain
Features
- 3rd generation Solicon Carbide (SiC) MOSFET technology
- Low impedance package with driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
1 2 34 5 6 7 G KS S S S S S
Gate (Pin 1)
Driver Source (Pin 2)
Drain (TAB)
Power Source (Pin 3,4,5,6,7)
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to...
