Datasheet Summary
CAB006M12GM3, CAB006M12GM3T
1200 V, 6 mΩ, Silicon Carbide, Half-Bridge Module
Technical Features
- Ultra-Low Loss
- High Frequency Operation
- Zero Turn-Off Tail Current from MOSFET
- Normally-Off, Fail-Safe Device Operation
- Optional Pre-Applied Thermal Interface Material
VDS RDS(on)
1200 V 6 mΩ
DC+
G1 S1
T1
G2 S2
-t°
T2 DC-
Typical Applications
- DC-DC Converters
- EV Chargers
- High-Efficiency Converters / Inverters
- Renewable Energy
- Smart-Grid / Grid-Tied Distributed Generation
System Benefits
- Enables pact, Lightweight Systems
- Increased System Efficiency, due to Low Switching
& Conduction Losses of SiC
- Reduced Thermal Requirements and System Cost
Key...