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CAB004M12GM4 - Half-Bridge Module

Key Features

  • Gen4 Technology with Soft Body Diode G1 S1 AC T1 G2 S2 -t° C T2 DC- Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CAB004M12GM4, CAB004M12GM4T 5 V4 DS 3 1200 V 2 1 RDS(on) 4 mΩ 1200 V, 4 mΩ, Silicon Carbide, Half-Bridge Module D DC+ Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation • Optional Pre-Applied Thermal Interface Material • Features Gen4 Technology with Soft Body Diode G1 S1 AC T1 G2 S2 -t° C T2 DC- Typical Applications • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / Grid-Tied Distributed Generation System Benefits • Enables Compact, Lightweight Systems • Increased System Efficiency, due to Low Switching & ConBduction Losses of SiC • Reduced Thermal Requirements and System Cost Key Parameters Parameter Symbol Min. Typ. Max.