CAB004M12GM4T Description
CAB004M12GM4, CAB004M12GM4T 5 V4 DS 3 1200 V 2 1 RDS(on) 4 mΩ 1200 V, 4 mΩ, Silicon Carbide, Half-Bridge Module D DC+.
CAB004M12GM4T Key Features
- Ultra-Low Loss
- High Frequency Operation
- Zero Turn-Off Tail Current from MOSFET
- Normally-Off, Fail-Safe Device Operation
- Optional Pre-Applied Thermal Interface Material
- Features Gen4 Technology with Soft Body Diode