CAB003M09DM3 Description
CAB003M09DM3 5 900 V, 2.5 mΩ, Silicon Carbide, Half-Bridge Module D Technical.
CAB003M09DM3 Key Features
- Ultra-Low Loss and Lightweight AlSiC Baseplate
- High Frequency Operation
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Implements Wolfspeed’s Third Generation SiC MOSFET
- Silicon Nitride Insulator