CGHV50200F - GaN HEMT

Product Overview

Wolfspeed

Datasheet Details

Part number	CGHV50200F
Manufacturer	Wolfspeed
File Size	1.89 MB
Description	GaN HEMT
Datasheet	CGHV50200F Datasheet
Additional preview pages of the CGHV50200F datasheet.

Product details

Description

Wolfspeed's CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight.

Features

4.4 - 5.0 GHz Operation.
180 W Typical PSAT.
11.5 dB Typical Power Gain.
48% Typical Power Efficiency.
50 Ohm Internally Matched.

📁 Similar Datasheet

CGHV59070 - RF Power GaN HEMT (Cree)
CGHV59350 - GaN HEMT (Cree)
CGHV14250 - GaN HEMT (Cree)
CGHV14500 - GaN HEMT (Cree)
CGHV14500F - GaN HEMT (MACOM)
CGHV14800 - GaN HEMT (Cree)
CGHV14800F - GaN HEMT (Cree)
CGHV1F006S - GaN HEMT (Cree)

Other Datasheets by Wolfspeed

CGHV14800F1 - 800W GaN Transistor
CGHV1F025S - GaN HEMT
CGHV1J006D - GaN HEMT Die
CGHV1J025D - GaN HEMT Die
CGHV1J070D - GaN HEMT Die
CGHV27015S - GaN HEMT

Published: Jun 24, 2023 |