Datasheet4U Logo Datasheet4U.com

CGHV96100F2 - GaN HEMT

Datasheet Summary

Description

Wolfspeed’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.

Features

  • 8.4 - 9.6 GHz Operation.
  • 145 W POUT typical.
  • 10 dB Power Gain.
  • 40% Typical PAE.
  • 50 Ohm Internally Matched.

📥 Download Datasheet

Datasheet preview – CGHV96100F2

Datasheet Details

Part number CGHV96100F2
Manufacturer Wolfspeed
File Size 1.68 MB
Description GaN HEMT
Datasheet download datasheet CGHV96100F2 Datasheet
Additional preview pages of the CGHV96100F2 datasheet.

📁 Similar Datasheet

Other Datasheets by Wolfspeed

Full PDF Text Transcription

Click to expand full text
CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Wolfspeed’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. PN: CGHV96100F2 Package Type: 440217 Typical Performance Over 8.4 - 9.
Published: |