CMPA601C025D Overview
Key Specifications
Max Frequency: 12 GHz
Max Operating Temp: 85 °C
Min Operating Temp: -40 °C
Description
Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
Key Features
- 32 dB Small Signal Gain
- 30 W Typical PSAT Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.172 x 0.239 x 0.004 inches
