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E3M0060065D - Silicon Carbide Power MOSFET

Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits.
  • Higher system efficiency.
  • Reduce cooling requirements.
  • Increase power density.
  • Increase system switching frequency 1 23.

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Full PDF Text Transcription

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E3M0060065D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency 1 23 Applications • EV Battery Chargers • High Voltage DC/DC Converters Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc.
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