E3M0060065D
Overview
- 3rd generation SiC MOSFET technology
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances *
- Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
- Automotive Qualified (AEC-Q101) and PPAP Capable Benefits
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase system switching frequency 1 23
