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PXAC210552FC Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Wolfspeed

Overview: PXAC210552FC Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170.

General Description

The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band.

It

Key Features

  • dual-path design, t input and output matching, and a thermally-enhanced package with c earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. Peak/Average Ratio, Gain (dB) Efficiency (%) d Single-carrier WCDMA Drive-up o VDD = 26 V, IDQ = 120 mA, ƒ = 2170 MHz r 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth p 32 80 Efficiency 28 60 d 24 40 e 20 20 u 16 Gain 0 in 12 -20 t 8 -40 PAR.

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