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PXAE183708NB - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Type: PG-HB2SOF-8-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ= 800 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 -40.

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Datasheet Details

Part number PXAE183708NB
Manufacturer Wolfspeed
File Size 661.53 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAE183708NB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PXAE183708NB Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz Description The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Type: PG-HB2SOF-8-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ= 800 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 -20 PAR @ 0.