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YMP7N60 - N-Channel Enhancement Mode Power MOSFET

Description

The YMP1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

BVDSS typ.

Features

  • VDS=600V；ID= 7 A@ VGS =10V； RDS(ON)< 1.2 Ω @ VGS =10V.
  • Special process technology for high ESD capability.
  • Special designed for Convertors and power controls.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation GD S 100% UIS TESTED!.

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Datasheet Details

Part number YMP7N60
Manufacturer YM
File Size 2.38 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet YMP7N60 Datasheet

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Full PDF Text Transcription

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YMP7N60 N-Channel Enhancement Mode Power MOSFET General Description The YMP1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary BVDSS typ. RDS(ON) typ. max. ID 600 1 1.2 7 V Ω Ω A Features ● VDS=600V；ID= 7 A@ VGS =10V； RDS(ON)< 1.
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