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BAW56W Datasheet Preview

BAW56W Datasheet

Dual Switching Diodes

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DATA SHEET
SEMICONDUCTOR
Dual Switching Diodes
BAW56W
H
z Pb-Free Package is Available.
DEVICE MARKING
BAW56W = A1
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltag
Forward Current
Peak Forward Surge Current
Ordering Information
Device
BAW56W
Marking
A1
Symbol
VR
IF
IFM(surge)
Shipping
3000/Tape&Reel
Max Unit
70 Vdc
200 mAdc
500 mAdc
CATHODE
1
CATHODE
2
3
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
Max
200
1.6
0.625
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 60 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
V(BR)
IR
CD
VF
trr
70
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
30
2.5
50
2.0
715
855
1000
1250
6.0
SOT–323
3
12
Unit
Vdc
µAdc
pF
mVdc
ns
http://www.yeashin.com
1
REV.02 20120305




YS

BAW56W Datasheet Preview

BAW56W Datasheet

Dual Switching Diodes

No Preview Available !

DEVICE CHARACTERISTICS
BAW56W
+10 V 820 2.0 k
100 µH
IF
0.1µF
tr
t
p
10%
t
0.1 µF
50 OUTPUT
PULSE
GENERATOR
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
V R INPUT SIGNAL
IF
IR
t rr t
i R(REC) = 1.0 mA
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
100 10
1.0
10
0.1
1.0
0.01
0.1
0.2
0.4 0.6 0.8 1.0
VF , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.2
0.001
0
10 20 30 40
VR , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
2.0
1.0
http://www.yeashin.com
02 4 6 8
VR , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2 REV.02 20120305


Part Number BAW56W
Description Dual Switching Diodes
Maker YS
Total Page 3 Pages
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