RB751S-40 Datasheet - YS

RB751S-40 Schottky Barrier Diode

DATA SHEET SEMICONDUCTOR 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 200 mW TSTG Storage Temperature Range -55 to +125 °C TJ Operating Junction Temperature +125 °C VRM Peal Reverse Voltage 40 V VR Reverse Voltage 30 V IF Forward Current 30 mA IFSM Non-Repetitive Peak Forward Current 500 mA These ratings are limitin.

RB751S-40 Features

* Low Forward Voltage Drop

* Flat Lead SOD-523 Small Outline Plastic Package

* Extremely Small SOD-523 Package

* Surface Device Type Mounting

* RoHS Compliant

* Matte Tin(Sn) Lead Finish

* Band Indicates Cathode RB751S-40 H DEVICE MARKING CODES: Device Type RB751S-40

RB751S-40 Datasheet (676.62 KB)