Datasheet Details
| Part number | 2N7002K |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 645.00 KB |
| Description | N-channel MOSFET |
| Datasheet |
 2N7002K Datasheet
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| Part number | 2N7002K |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 645.00 KB |
| Description | N-channel MOSFET |
| Datasheet |
2N7002K Datasheet
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● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current TA=70℃ @ Steady State ID Pulsed Drain Current A IDM ±20 V 340 mA 272 1.5 A Total Power Dissipation @ TA=25℃ PD 350 mW Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 357 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 2N7002K F2 72K.
3000 30000 120000 7“ reel S-S1396 Rev.2.0,25-Dec-18 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com 2N7002K ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 V Zero Gate Voltage Drain Current Gate-Body Leakage Current IDSS IGSS1 IGSS2 IGSS3 VDS=60V,VGS=0V VGS= ±20V, VDS=0V VGS= ±10V, VDS=0V VGS= ±5V, VDS=0V 1 μA ±9 μA ±200 nA ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1 1.4 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=300mA VGS= 4.5V, ID=200mA 1.3 2.5 Ω 1.4 3.0 Diode Forward Voltage VSD IS=300mA,VGS=0V 1.2 V Maximum Body-Diode Continuous Current IS 340 mA Dynamic Parameters Input Capacitance Ciss 18 Output Capacitan
2N7002K RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 340mA ＜2.5ohm ＜3.0ohm ● ESD Protected Up to 2.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N7002K | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES |
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2N7002K | N-channel MOSFET | Kexin |
| HOTTECH | 2N7002K | N-Channel MOSFET | HOTTECH |
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2N7002K | N-Channel MOSFET | MCC |
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2N7002K | N-Channel Enhancement Mode Power MOSFET | WEITRON |
| Part Number | Description |
|---|---|
| 2N7002KC | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCDWQ | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCE | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCW | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCWQ | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KDW | N-Channel Enhancement Mode Field Effect Transistor |