2N7002K

The 2N7002K is N-channel MOSFET designed by Yangzhou Yangjie.

Product Overview

Yangzhou Yangjie

Datasheet Details

Part number	2N7002K
Manufacturer	Yangzhou Yangjie
File Size	645.00 KB
Description	N-channel MOSFET
Datasheet	2N7002K-YangzhouYangjie.pdf
Additional preview pages of the 2N7002K datasheet.

Product details

Description

Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applications Battery operated systems Solid-state relays Direct logic-level interface：TTL/CMOS Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current TA=70℃ @ Steady Sta

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Other Datasheets by Yangzhou Yangjie

2N7002KCDWQ - N-Channel Enhancement Mode Field Effect Transistor
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2N7002KCW - N-Channel Enhancement Mode Field Effect Transistor
2N7002KCWQ - N-Channel Enhancement Mode Field Effect Transistor

Published: Feb 26, 2019 |