Datasheet4U Logo Datasheet4U.com

2N7002K Datasheet

The 2N7002K is a N-channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number2N7002K
ManufacturerVishay
Overview 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V Qg typ. (nC) ID (mA) .
* Low on-resistance: 2 
* Low threshold: 2 V (typ.)
* Low input capacitance: 25 pF Available
* Fast switching speed: 25 ns Available
* Low input and output leakage
* TrenchFET® power MOSFET Available
* 2000 V ESD protection
* Material categorization: for definitions of compliance please se.
Part Number2N7002K
DescriptionN-channel MOSFET
ManufacturerFairchild Semiconductor
Overview 2N7002K — N-Channel Enhancement Mode Field Effect Transistor September 2014 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Lo.
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input / Output Leakage
* Ultra-Small Surface Mount Package
* Pb Free / RoHS Compliant
* ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD22 C101 D D G SOT 23 M.
Part Number2N7002K
DescriptionSmall-Signal MOSFET
Manufactureronsemi
Overview DATA SHEET Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 2N7002K, 2V7002K Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and O.
* ESD Protected
* Low RDS(on)
* Surface Mount Package
* 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications
* Low Side Load S.
Part Number2N7002K
DescriptionN-channel MOSFET
ManufacturerPanJit Semiconductor
Overview 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design .
* RDS(ON), VGS@10V,IDS@500mA=3Ω
* RDS(ON), VGS@4.5V,IDS@200mA=4Ω
* Advanced Trench Process Technology
* High Density Cell Design For Ultra Low On-Resistance
* Very Low Leakage Current In Off Condition
* Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, L.

Similar Datasheets

Part Number Manufacturer Description
2N7002 Vishay N-Channel 60V MOSFET
2N7002KDW WEITRON Dual N-Channel MOSFET
2N7002 Rectron N-Channel Enhancement Mode Power MOSFET
2N7002PS NXP Semiconductors N-Channel MOSFET
2N7002B Kodenshi AUK Group N-channel MOSFET
2N7002T Diodes Incorporated N-Channel MOSFET
2N7002DW Weitron Technology Dual N-Channel MOSFET