YJG53G06A - N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

General Description

Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Industrial and Motor Drive application Absolute Maximum Ratings (TA=25℃unless other

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YJG53G06A n-channel enhancement mode field effect transistor by Yangzhou Yangjie - Datasheet Preview

Datasheet Details

Part number	YJG53G06A
Manufacturer	Yangzhou Yangjie
File Size	631.44 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJG53G06A Datasheet

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YJG53G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 53A ＜8.