• Part: YJG85G06A
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Manufacturer: Yangjie Electronic
  • Size: 842.33 KB
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Yangjie Electronic
YJG85G06A
YJG85G06A is N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangjie Electronic.
RoHS PLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary - VDS - ID - ID (Package limited) - RDS(ON)( at VGS=10V) - RDS(ON)( at VGS=4.5V) - 100% UIS Tested - 100% ▽VDS Tested 60V 130A 85A <3.0 mohm <4.5 mohm General Description - Split Gate Trench MOSFET technology - Excellent package for heat dissipation - High density cell design for low RDS(ON) Applications - DC-DC Converters - Power management functions - Synchronous-rectification applications -...