Datasheet Details
| Part number | YJG85G06A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 842.33 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJG85G06A-YangzhouYangjie.pdf |
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Overview: YJG85G06A RoHS PLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● ID (Package limited) ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 130A 85A ＜3.0 mohm ＜4.
| Part number | YJG85G06A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 842.33 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJG85G06A-YangzhouYangjie.pdf |
|
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● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Synchronous-rectification applications ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Drain Current A Pulsed Drain Current B TC=25℃ TC=100℃ Avalanche energy C Total Power Dissipation D Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient E Junction and Storage Temperature Range VDS VGS ID ID IDM EAS PD RθJC RθJA TJ ,TSTG 60 ±20 130 85 54 390 270 105 1.2 55 -55～+150 V V A A A mJ W ℃/ W ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJG85G06A F1 YJG85G06A 5000 10000 50000 13“ reel S-S1941 Rev.2.0,25-Dec-18 1/7 Yangzhou Yangjie Electronic Technology Co., Ltd.
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YJG85G06A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Dynamic Parameters VGS= 0V, ID=250μA VDS=60V,VGS=0V VGS= ±20V, VDS=0V VDS= VGS, ID=250μA VGS= 10V, ID=20A VGS= 4.5V, ID=10A IS=20A,VGS=0V 60 V 1 μA ±100 nA 1.0 1.8 2.5 V 2.5 3.0 mΩ 3.5 4.5 1.2 V 85 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Parameters
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