Datasheet Details
| Part number | YJG53G06A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 631.44 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJG53G06A-YangzhouYangjie.pdf |
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Overview: YJG53G06A RoHS PLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 53A ＜8.
| Part number | YJG53G06A |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 631.44 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | YJG53G06A-YangzhouYangjie.pdf |
|
|
|
● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Industrial and Motor Drive application ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A Tc=25℃ Tc=100℃ Avalanche energy B Total Power Dissipation Tc=25℃ Tc=100℃ Thermal Resistance Junction-to-Case Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking VDS VGS ID IDM EAS PD RθJC TJ ,TSTG 60 ±20 53 34 160 195 75 30 1.8 -55～+150 V V A A mJ W ℃/ W ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJG53G06A F2 YJG53G06A 3000 6000 60000 13“ reel S-D002 Rev.2.0,25-Dec-18 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
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YJG53G06A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS= 0V, ID=250μA VDS=60V,VGS=0V TJ=25℃ TJ=55℃ VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=20A VGS= 4.5V, ID=10A Diode Forward Voltage VSD IS=20A,VGS=0V Maximum Body-Diode Continuous Current IS Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss VDS=30V,VGS=0V,f=1MHZ Reverse Transfer Capacitance Crss Switching Parameters Total Gate Charge Qg Gate-Source Charge Qgs VGS=10V,VDS=30V,ID=20A Gate-Drain Charge Qgd Reverse Recovery Chrage Reverse
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