YJG85G06A - N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

General Description

Split Gate Trench MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON) Applications DC-DC Converters Power management functions Synchronous-rectification applications Absolute Maximum Ratings (TA=25℃unless other

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YJG85G06A n-channel enhancement mode field effect transistor by Yangzhou Yangjie - Datasheet Preview

Datasheet Details

Part number	YJG85G06A
Manufacturer	Yangzhou Yangjie
File Size	842.33 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	YJG85G06A Datasheet

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YJG85G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● ID (Package limited) ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 130A 85A ＜3.0 mohm ＜4.