YJG85G06A Datasheet - Yangzhou Yangjie

N-Channel Enhancement Mode Field Effect Transistor

YJG85G06A General Description

* Split Gate Trench MOSFET technology * Excellent package for heat dissipation * High density cell design for low RDS(ON) Applications * DC-DC Converters * Power management functions * Synchronous-rectification applications * Absolute Maximum Ratings (TA=25℃unless other.

YJG85G06A Datasheet (842.33 KB)

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YJG85G06A

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Yangzhou Yangjie

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842.33 KB

Description:

N-channel enhancement mode field effect transistor.
YJG85G06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID ID (Package limited) RDS.

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YJG85G06A N-Channel Enhancement Mode Field Effect Transistor Yangzhou Yangjie

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YJG85G06A General Description

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