Datasheet Summary
YUKUTO SEMICONDUCTOR
Features
Power dissipation PCM: 900 mW (TA=25℃) TRANSISTOR (NPN)
Silicon Transistor
TO-92MOD
1. EMITTER
2. COLLECTOR 3. BASE
Collector current ICM: 1 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output...
