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CJD04N60 - N-Channel Power MOSFET

General Description

high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode wigh fast recovery time.

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Datasheet Details

Part number CJD04N60
Manufacturer ZPSEMI
File Size 1.02 MB
Description N-Channel Power MOSFET
Datasheet download datasheet CJD04N60 Datasheet

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Full PDF Text Transcription for CJD04N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJD04N60. For precise diagrams, tables, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-2516Plastic-Encapsulate MOSFETS CJD04N60 600V N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX 3.0Ω@10V ID 4A TO-251...

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N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX 3.0Ω@10V ID 4A TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3.