CJD04N60 Datasheet | JCET

Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJD044N60 z XXX CJD04N60 = Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain-Source Diode Forward Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGSS ID IS EAS RθJA TJ, TSTG Value 600 ±30 4.0 4.0 260 100 -55 ~+150 Unit V A m J ℃/W ℃ .cj-elec. E,May,2016 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =4.0A Zero gate voltage drain current IDSS VDS =600V, VGS...