CJD04N60 - N-Channel Power MOSFET

Description

high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode wigh fast recovery time.

CJD04N60 N-Channel Power MOSFET by ZPSEMI - Datasheet Preview — Datasheet preview – CJD04N60

Datasheet Details

Part number	CJD04N60
Manufacturer	ZPSEMI
File Size	1.02 MB
Description	N-Channel Power MOSFET
Datasheet	CJD04N60 Datasheet
Additional preview pages of the CJD04N60 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-2516Plastic-Encapsulate MOSFETS CJD04N60 600V N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX 3.0Ω@10V ID 4A TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3.

Published: Dec 19, 2016 |