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CJD04N60B - N-Channel MOSFET

General Description

1.

GATE 2.

energy in the avalanche mode and switch efficiently.This new high energy 3.

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Datasheet Details

Part number CJD04N60B
Manufacturer JCET
File Size 658.96 KB
Description N-Channel MOSFET
Datasheet download datasheet CJD04N60B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B V(BR)DSS 600V 600V N-Channel Power MOSFET RDS(on)MAX   3.0Ω@10V ID 4A TO-251S   General Description This advanced high voltage MOSFET is designed to wighstand high 1. GATE 2. DRAIN energy in the avalanche mode and switch efficiently.This new high energy 3. SOURCE device also offers a drain-to-source diode wigh fast recovery time.Desighed 1 23 for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits.