CJD04N60B Datasheet | JCET

Description This advanced high voltage MOSFET is designed to wighstand high 1. GATE 2. DRAIN energy in the avalanche mode and switch efficiently.This new high energy 3. SOURCE device also offers a drain-to-source diode wigh fast recovery time.Desighed 1 23 for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits. FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJD04N60B z XXX CJD04N60B = Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage...