CJD04N60B - N-Channel Power MOSFET

Description

This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,po

📥 Download Datasheet

CJD04N60B N-Channel Power MOSFET by ZPSEMI - Datasheet Preview — Datasheet preview – CJD04N60B

Datasheet Details

Part number	CJD04N60B
Manufacturer	ZPSEMI
File Size	724.35 KB
Description	N-Channel Power MOSFET
Datasheet	CJD04N60B Datasheet
Additional preview pages of the CJD04N60B datasheet.

📁 Similar Datasheet

CJD04N60B - N-Channel MOSFET (JCET)
CJD04N60 - N-Channel Power MOSFET (JCET)
CJD04N60A - N-Channel MOSFET (JCET)
CJD04N65 - N-Channel MOSFET (JCET)
CJD01N60 - N-Channel Power MOSFET (JCET)
CJD02N60 - N-Channel MOSFET (JCET)
CJD02N65 - N-Channel MOSFET (JCET)
CJD05N60B - N-Channel MOSFET (JCET)
CJD1117-1.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
CJD1117-1.8 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)

Other Datasheets by ZPSEMI

CJD04N60 - N-Channel Power MOSFET
CJD04N60A - N-Channel Power MOSFET
CJD04N65 - N-Channel Power MOSFET
CJD04N65A - N-Channel Power MOSFET
CJD01N60 - N-Channel Power MOSFET
CJD01N65B - N-Channel Power MOSFET
CJD01N80 - N-Channel Power MOSFET
CJD02N60 - N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text

CJD04N60B TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits. TO-251S 1. GATE 2. DRAIN 3.

Published: Dec 19, 2016 |