Datasheet Summary
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B 600V N-Channel Power MOSFET
General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits.
TO-251S
1. GATE 2. DRAIN 3. SOURCE
FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-So...
