This advanced high voltage MOSFET is designed to wighstand high
energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,po
Full PDF Text Transcription for CJD04N60B (Reference)
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CJD04N60B TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high en...
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ion This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits. TO-251S 1. GATE 2. DRAIN 3.
CJD04N60B Datasheet
