CJD04N60B - N-Channel Power MOSFET

CJD04N60B Datasheet Preview — Preview of CJD04N60B PDF

Datasheet Details

Part number	CJD04N60B
Manufacturer	ZPSEMI
File Size	724.35 KB
Description	N-Channel Power MOSFET
Datasheet	CJD04N60B-ZPSEMI.pdf

CJD04N60B Product details

Description

This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits.TO-251S 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z

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Published: Dec 19, 2016 |