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BF721 Datasheet

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BF721 pdf
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BF721
ISSUE 4 – MARCH 2001
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BF720
PARTMARKING DETAILS:- BF721
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
-300
-300
-5
-100
-50
-2
-55 to +150
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base BF721
Breakdown
Voltage
V(BR)CBO
-300
V IC=-10µA, IE=0
Collector-Emitter BF721
Breakdown
Voltage
V(BR)CEO
-300
V IC=-1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V IE=-100µA, IC=0
Collector Cut-Off Current ICBO
Collector Cut-Off
Current
ICER
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-10 nA
-50 nA
-10 µA
-10 µA
-0.6 V
VCB=-200V, IE=0 †
VCE=-200V, RBE=2.7K
VCE=-200V, RBE=2.7K
VEB=-5V, IC=0
IC=-30mA, IB=-5mA*
Base Emitter
Saturation Voltage
VBE(sat)
-0.9 V
IC=-20mA, IB=-2mA*
Static Forward Current hFE
Transfer Ratio
-50
IC=-25mA, VCE=-20V*
Transition Frequency fT
100 MHz IC=-10mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
0.8
†Tamb=150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA92 datasheet.
pF VCB=-30V, f=1MHz
TBA


Part Number BF721
Description PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Maker Zetex Semiconductors
Total Page 1 Pages
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