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Zetex Semiconductors

FMMT38B Datasheet Preview

FMMT38B Datasheet

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

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SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996
FEATURES
* 60 Volt VCEO
* Gain of 10K at IC=0.5 Amp
PARTMARKING DETAILS –
FMMT38A – 4J
FMMT38B – 5J
FMMT38C – 7J
ABSOLUTE MAXIMUM RATINGS.
FMMT38A
FMMT38B
FMMT38C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
60
Emitter-Base Voltage
VEBO
10
Peak Pulse Current
ICM 800
Continuous Collector Current
IC
300
Power Dissipation at Tamb=25°C
Ptot
330
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
V
V
V
mA
mA
mW
°C
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V IC=10A, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60
V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
V IE=10A, IC=0
Collector Cut-Off
Current
ICBO
100 nA
VCB=60V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100
1.25
nA
V
VEB=8V, IC=0
IC=800mA, IB=8mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.8 V
IC=800mA, VCE=5V*
Static
Forward
Current
Transfer
Ratio
FMMT38A hFE
FMMT38B
500
1000
2000
4000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
FMMT38C
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
*Measured under pulsed conditions. Pulse width=300s. Duty cycle  2%
Spice parameter data is available upon request for this device
3 - 100




Zetex Semiconductors

FMMT38B Datasheet Preview

FMMT38B Datasheet

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

No Preview Available !

TYPICAL CHARACTERISTICS
FMMT38A
FMMT38B
FMMT38C
1.0
-55°C
0.8
+25°C
0.6
+100°C
0.4 +175°C
IC/IB=100
0.2
0.001
0.01 0.1
1
IC - Collector Current (Amps)
VCE(sat) v IC
10
1.6 +100°C
1.4
1.2
VCE=5V
1.0 +25°C
0.8
0.6
0.4 -55°C
0.2
0 0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
hFE v IC
IC/IB=100
2.0
-55°C
1.5
+25°C
1.0 +100°C
+175°C
0.5
0.001
0.01
0.1
1
IC - Collector Current (Amps)
VBE(sat) v IC
10
D=1 (D.C.)
150
100
D=0.5
50
D=0.2
0
0.0001
D=0.1
D=0.05
Single Pulse
0.001 0.01 0.1 1 10
Pulse Width (seconds)
100
Maximum transient thermal impedance
VCE=5V
2.0
-55°C
1.5
+25°C
1.0 +100°C
+175°C
0.5
0.001
0.01
0.1
1
IC - Collector Current (Amps)
VBE(on) v IC
1
10
100m
10m
DC
1s
100ms
10ms
1ms
100us
1m
100m
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
3 - 101


Part Number FMMT38B
Description NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Maker Zetex Semiconductors
Total Page 2 Pages
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