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ZC829 Datasheet Preview

ZC829 Datasheet

SILICON 28V HYPERABRUPT VARACTOR DIODES

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SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics and high
Q. Low reverse current ensures very low phase noise
performance. Available in single or dual common cathode format
in a wide rage of miniature surface mount packages.
Features
· Close tolerance C-V characteristics
· High tuning ratio
· Low IR (typically 200pA)
· Excellent phase noise performance
· High Q
· Range of miniature surface mount packages
Applications
· VCXO and TCXO
· Wireless communications
· Pagers
· Mobile radio
830 series
*Where steeper CV slopes are required there is the 12V hyperabrupt range.
ZC930, ZMV930, ZV930, ZV931 Series
ISSUE 6 - JANUARY 2002
1




Zetex Semiconductors

ZC829 Datasheet Preview

ZC829 Datasheet

SILICON 28V HYPERABRUPT VARACTOR DIODES

No Preview Available !

830 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance (pF)
VR=2V, f=1MHz
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
MIN.
7.38
7.79
9.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
NOM.
8.2
8.2
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
MAX.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
Min Q
VR=3V
f=50MHz
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
Capacitance Ratio
C2 / C20
at f=1MHz
MIN.
MAX.
4.3 5.8
4.3 5.8
4.5 6.0
4.5 6.0
4.5 6.0
4.5 6.0
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Forward current
Power dissipation at Tamb = 25ЊC SOT23
Power dissipation at Tamb = 25ЊC SOD323
Power dissipation at Tamb = 25ЊC SOD523
Operating and storage temperature range
SYMBOL
IF
Ptot
Ptot
Ptot
MAX
200
330
330
250
-55 to +150
UNIT
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
CONDITIONS
IR = 10uA
VR = 20V
VR = 3V, f = 1MHz
MIN.
25
TYP.
0.2
300
MAX.
20
400
UNIT
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2


Part Number ZC829
Description SILICON 28V HYPERABRUPT VARACTOR DIODES
Maker Zetex Semiconductors
Total Page 6 Pages
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