silicon ion-implanted hyperabrupt tuner diodes.
* Close tolerance C-V characteristics
* High tuning ratio
* Low IR (typically 200pA)
* Excellent phase noise performance
* High Q
* Range of minia.
* VCXO and TCXO
* Wireless communications
* Pagers
* Mobile radio
*Where steeper CV slopes are required.
A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format.
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