Siemens Semiconductor Group
CFY25-17 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic dis
Rating:
1
★
(3 votes)
Zetex Semiconductors
ZC823 - SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description
A range of silicon varactor diodes
Rating:
1
★
(3 votes)
Zetex Semiconductors
ZC825 - SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description
A range of silicon varactor diodes
Rating:
1
★
(3 votes)
Siemens Semiconductor Group
CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic dis
Rating:
1
★
(2 votes)
Zetex Semiconductors
ZC821 - SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description
A range of silicon varactor diodes
Rating:
1
★
(2 votes)
Zetex Semiconductors
ZC824 - SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description
A range of silicon varactor diodes
Rating:
1
★
(2 votes)
Zetex Semiconductors
ZC826 - SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description
A range of silicon varactor diodes
Rating:
1
★
(2 votes)
SUNSTAR
SDL9051 - ion-implanted metal gate CMOS
The clock IC SDL9051 is a low-threshold-voltage, ion-implanted metal gate CMOS integrated circuit that provides signals to drive a 4-digit duplexes li
Rating:
1
★
(2 votes)
Siemens Semiconductor Group
CFY25 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic dis
Rating:
1
★
(1 votes)
Siemens Semiconductor Group
CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic dis
Rating:
1
★
(1 votes)
Zetex Semiconductors
ZC820 - SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description
A range of silicon varactor diodes
Rating:
1
★
(1 votes)
Zetex Semiconductors
ZC822 - SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
830 series
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description
A range of silicon varactor diodes
Rating:
1
★
(1 votes)
