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CFY25-17 Datasheet - Siemens Semiconductor Group

CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q62703-F107 Q62703-F108 Pin Configuration 1 2 3 4 D S G S Package1) Micro-X Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Total power dissipation,.

CFY25-17 Datasheet (158.91 KB)

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Datasheet Details

Part number:

CFY25-17

Manufacturer:

Siemens Semiconductor Group

File Size:

158.91 KB

Description:

Gaas fet (low noise high gain for front-end amplifiers lon-implanted planar structure all gold metallization).

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TAGS

CFY25-17 GaAs FET Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization Siemens Semiconductor Group

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