CFY25
Siemens Semiconductor Group
158.91 KB
Gaas fet (low noise high gain for front-end amplifiers lon-implanted planar structure all gold metallization).
GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis.
📁 Related Datasheet
CFY25 HiRel X-Band GaAs MOSFET (Infineon)
CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20 HiRel X-Band GaAs MOSFET (Infineon)
CFY25-20P HiRel X-Band GaAs MOSFET (Infineon)
CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-23 HiRel X-Band GaAs MOSFET (Infineon)
CFY25-23P HiRel X-Band GaAs MOSFET (Infineon)
CFY25-P HiRel X-Band GaAs MOSFET (Infineon)
CFY27 HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
TAGS
Image Gallery
