CFY25 Datasheet - Siemens Semiconductor Group

CFY25 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q62703-F107 Q62703-F108 Pin Configuration 1 2 3 4 D S G S Package1) Micro-X Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Total power dissipation,.

CFY25_SiemensSemiconductorGroup.pdf

CFY25 Datasheet Preview — Preview of CFY25 PDF

Datasheet Details

Part number:

CFY25

Manufacturer:

Siemens Semiconductor Group

File Size:

158.91 KB

Description:

Gaas fet (low noise high gain for front-end amplifiers lon-implanted planar structure all gold metallization).

CFY25 Distributor

📁 Related Datasheet

CFY25 HiRel X-Band GaAs MOSFET (Infineon)

CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)

CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)

CFY25-20 HiRel X-Band GaAs MOSFET (Infineon)

CFY25-20P HiRel X-Band GaAs MOSFET (Infineon)

CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)

CFY25-23 HiRel X-Band GaAs MOSFET (Infineon)

CFY25-23P HiRel X-Band GaAs MOSFET (Infineon)

TAGS

CFY25 CFY25 GaAs FET Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization Siemens Semiconductor Group