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Zetex Semiconductors

ZXMN6A09DN8 Datasheet Preview

ZXMN6A09DN8 Datasheet

60V SO8 N-channel enhancement mode MOSFET

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ZXMN6A09DN8
60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
60
RDS(on) ()
0.040 @ VGS= 10V
0.060 @ VGS= 4.5V
ID (A)
5.6
4.6
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOIC package
D1 D2
G1 G2
S1 S2
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
S1 D1
G1 D1
S2 D2
G2 D2
Top view
Device
ZXMN6A09DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
Device marking
ZXMN
6A09D
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com




Zetex Semiconductors

ZXMN6A09DN8 Datasheet Preview

ZXMN6A09DN8 Datasheet

60V SO8 N-channel enhancement mode MOSFET

No Preview Available !

ZXMN6A09DN8
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ VGS=10V; Tamb=25°C(b)
@ VGS=10V; Tamb=70°C(b)
@ VGS=10V; Tamb=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb = 25°C(a)(d)
Linear derating factor
Power dissipation at Tamb = 25°C(b)(e)
Linear derating factor
Power dissipation at Tamb = 25°C(b)(d)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
60
±20
5.6
4.5
4.3
27
3.5
27
1.25
10
1.8
14
2.1
17
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)(d)
Junction to ambient(a)(e)
Junction to ambient(b)(d)
Symbol
RJA
RJA
RJA
Limit
100
70
60
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com


Part Number ZXMN6A09DN8
Description 60V SO8 N-channel enhancement mode MOSFET
Maker Zetex Semiconductors
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