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ZXTN25012EFH Datasheet Preview

ZXTN25012EFH Datasheet

NPN medium power transistor

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ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BVCEO > 12V
BVECO > 4.5V
hFE > 500
IC(cont) = 6A
VCE(sat) < 32mV @ 1A
RCE(sat) = 23m
PD = 1.25W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• High power dissipation SOT23 package
• High peak current
• Very high gain
• Low saturation voltage
• 6V reverse blocking voltage
Applications
• MOSFET gate drivers
• Power switches
• Motor control
• DC fans
• DC-DC converters
Ordering information
C
B
E
E
C
B
Pinout - top view
Device
ZXTN25012EFHTA
Device marking
1C3
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com




Zetex Semiconductors

ZXTN25012EFH Datasheet Preview

ZXTN25012EFH Datasheet

NPN medium power transistor

No Preview Available !

ZXTN25012EFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(c)
Base current
Peak pulse current
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Power dissipation at Tamb =25°C(c)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
PD
Limit
20
12
4.5
7
6
1
15
0.73
5.84
Unit
V
V
V
V
A
A
A
W
mW/°C
PD 1.05 W
8.4 mW/°C
PD 1.25 W
9.6 mW/°C
PD 1.81 W
14.5 mW/°C
Tj, Tstg - 55 to 150
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
RJA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com


Part Number ZXTN25012EFH
Description NPN medium power transistor
Maker Zetex Semiconductors
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