Datasheet Details
| Part number | CSD13302W |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 517.04 KB |
| Description | 12-V N-Channel Power MOSFET |
| Datasheet |
 CSD13302W Datasheet
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| Part number | CSD13302W |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 517.04 KB |
| Description | 12-V N-Channel Power MOSFET |
| Datasheet |
CSD13302W Datasheet
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This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1 mm outline with excellent thermal characteristics and an ultra low profile.
Top View Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 12 6.0 2.1 VGS = 2.5 V VGS = 4.5 V 1.0 21.2 14.6 UNIT V nC nC mΩ mΩ V Device CSD13302W CSD13302WT Ordering Information(1) Qty Media Package 3000 7-Inch Reel 250 7-Inch Reel 1.0 mm × 1.0 mm Wafer Level Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS VGS ID IDM PD TJ, Tstg Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation (3) Operating Junction and Storage Temperature Range VALUE 12 ±10 1.6 29 1.8 –55 to 150 UNIT V V A A W °C (1) Device Operating at a temperature of 105ºC (2) Min Cu Typ RθJA = 275ºC/W, Pulse width ≤100 μs, duty cycle ≤1% (3) Max Cu Typ RθJA = 70ºC/W RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 35 TC = 25°C, I D = 1 A 30 TC = 125°C, I D = 1 A 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 VGS - Gate-To-Source Voltage (V) D007 Gate Charge 5 4.5 ID = 1 A VDS = 6 V 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 7 Qg - Gate Charge (nC) D004 1 An IMPORTANT NOTICE at the end of this data sheet address
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD13302W 12 V N Channel NexFET™ Power MOSFET CSD13302W SLPS535 – MARCH 2015.
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